| 项 目 | 内容（中文） | 内容（英文） |
| 晶圆尺寸 | 4-8 inch | Wafer Size: 4-8 inch |
| 适配材料 | Si, Cu, Au, Au-Sn, Al-Ge 等 | Compatible Materials: Si, Cu, Au, Au-Sn, Al-Ge, etc. |
| 最高温度 | 600°C | Max Temperature: 600°C |
| 最大压力合力 | 100kN, 控制精度 ±1% | Max Pressure: 100kN, Control Accuracy ±1% |
| 升温速度 | 30°C/min | Heating Rate: 30°C/min |
| 温度均匀性 | ≤±2% | Temperature Uniformity: ≤±2% |
| 阳极电压电流 | ≤2kV, ≤100mA | Anode Voltage and Current: ≤2kV, ≤100mA |
| 键合后精度 | ≤5μm, ≤2μm | Post-Bonding Accuracy: ≤5μm, ≤2μm |
| 上料模式 | Cassette | Loading Method: Cassette |
| 多模模块一体化集成 | 寻边、活化、清洗、对准、键合 | Multi-mode Integration: Edge detection, activation, cleaning, alignment, bonding |
| 键合气氛 | 真空、甲醇、惰性气体（可选） | Bonding Atmosphere: Vacuum, Methanol, Inert Gas (Optional) |
