该高锰酸钾氧化铝粗抛液采用优质进口氧化铝微晶颗粒作为核心磨料，其粒径严格控制在亚微米级范围（0.3-0.5μm），具有优异的分散稳定性与抗沉降性能。创新性地引入氧化剂成分，通过化学-机械协同作用实现对碳化硅晶片的高效抛光：氧化组分优先软化表面层，再由精密氧化铝颗粒完成纳米级切削，显著提升材料去除率。产品pH值稳定在弱碱性范围（8.5-10.0），固含量精确调控（4.0-4.5%），配合无纺布抛光垫使用时，既能确保超光滑表面质量（Ra＜0.5nm），又可避免抛光介质残留，大幅降低基体亚表面损伤。整个抛光体系兼容主流加工设备，具有操作简便、维护成本低等优势。
This polishing slurry utilizes premium imported alumina microcrystalline particles as the primary abrasive material, with particle size strictly controlled within the sub-micron range (0.3-0.5μm), demonstrating exceptional dispersion stability and anti-sedimentation properties. The innovative incorporation of oxidizing agents enables efficient chemical-mechanical polishing of silicon carbide wafers: the oxidative components first soften the surface layer, followed by precision material removal through nano-scale abrasion with alumina particles, significantly enhancing the material removal rate. The product maintains stable pH within the weakly alkaline range (8.5-10.0) with precisely regulated solid content (4.0-4.5%). When used with non-woven polishing pads, it achieves ultra-smooth surface quality (Ra <0.5nm) while preventing residual polishing media and substantially reducing subsurface damage to the substrate. The complete polishing system is compatible with mainstream processing equipment and offers advantages of operational simplicity and low maintenance costs.
2寸/4寸/6寸/8寸/12寸单晶硅片 蓝宝石切片机 Sapphire Wafer Slicing Machine 超薄Si片 单晶硅 (Silicon) Goodwafer|提供优质晶圆抛光液 鑫科汇|提供2-12寸单晶硅片
