一、啥是常温键合？
直接键合：无需中间层、反应层，键合更可靠；
Direct bonding: No need for intermediate or reaction layers, making the bond more reliable;
常温键合：无需升降温，异种材料的键合变形小；
Room-temperature bonding: No heating or cooling required, minimizing deformation when bonding different materials;
工序简单：无需后续热处理，产能高
Simple process: No post-thermal processing needed, enabling high productivity
| 典型键合材料 | Typical Bonding Materials |
| Si-Si | Si-Si |
| Si-SiC | Si-SiC |
| 金属-金属 | Metal-Metal |
| 蓝宝石-蓝宝石 | Sapphire-Sapphire |
| SiC-GaN | SiC-GaN |
| LT/LN-Si | LT/LN-Si |
| LT/LN-SiC | LT/LN-SiC |
| LT/LN-SP | LT/LN-SP |
| InP-SiC | InP-SiC |
| 激光晶体-激光晶体 | Laser crystal – Laser crystal |
| 激光晶体-金刚石 | Laser crystal – Diamond |
| GaN-金刚石 | GaN – Diamond |
| 玻璃-玻璃 | Glass – Glass |
| SiC-Ga₂O₃ | SiC-Ga₂O₃ |
| Si-金刚石 | Si – Diamond |
| 玻璃-Polyimide | Glass – Polyimide |
| 项目 | 中文说明 | English Description |
| 晶圆尺寸 | 2–12 英寸 | Wafer Size: 2–12 inch |
| 适配材料 | Si、LT/LN、蓝宝石、InP、SiC、GaAs、GaN 等半导体材料以及金属、玻璃等 | Compatible Materials: Si, LT/LN, Sapphire, InP, SiC, GaAs, GaN semiconductors, metals, glass, etc. |
| 产能 | ≥6 对/小时 | Throughput: ≥6 pairs/hour |
| 上料模式 | Cassette | Loading Mode: Cassette |
| 加压系统最大压力 | 100 kN | Max Pressure of Press System: 100 kN |
| 对位方式及精度 | 边缘对准精度 ≤ ±50 µm；Mark 对准 ≤ ±2 µm | Alignment Accuracy: Edge ≤ ±50 µm; Mark ≤ ±2 µm |
| 键合强度 | ≥2.0 J/m² @ 常温（Si-Si 直接键合） | Bonding Strength: ≥2.0 J/m² @ Room Temp (Si-Si direct bond) |
三、常温键合优势
四、常温键合典型样品
