一、什么是碳化硅？4H-N、6H-N碳化硅有什么区别？
碳化硅晶片的主要应用领域有LED固体照明和高频率器件。该材料具有高出传统硅数倍的禁带、漂移速度、击穿电压、热导率、耐高温等优良特性，在高温、高压、高频、大功率、光电、抗辐射、微波性等电子应用领域和航天、军工、核能等极端环境应用有着不可替代的优势。国内独家碳化硅单晶供应商，在研发、技术、市场开发及商业运作等方面处绝对领先地位，已成功掌握76mm（3英寸）超大宝石级SiC2晶体生长核心技术工艺，达到国际2001年先进水平。
二、碳化硅的规格参数表
碳化硅规格 Silicon Carbide SiC
| 等级 Grade | Z级 Zero MPD |
工业级 Production |
研究级 Research Grade |
试片级 Dummy Grade |
|
| 直径 Diameter | 50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm | ||||
| 厚度 Thickness | 4H-N | 350 μm±25μm | |||
| 4H-SI | 500 μm±25μm | ||||
| 晶片方向 Wafer Orientation | Off axis : 4.0° toward 1120 !±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI | ||||
| 微管密度 Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |
| 电阻率 Resistivity | 4H-N | 0.015~0.028 Ω·cm | |||
| 6H-N | 0.02~0.1 Ω·cm | ||||
| 4/6H-SI | >1E5 Ω·cm | (90%) >1E5 Ω·cm | |||
| 主定位边方向 Primary Flat | {10-10}±5.0° | ||||
| 主定位边长度 Primary Flat Length | 15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm | ||||
| 次定位边长度 Secondary Flat Length | 8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm, —–, | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||
| 边缘 Edge exclusion | 3 mm | ||||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||
| 表面粗糙度 Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.5 nm | |||||
| 裂纹(强光灯观测) Cracks by high intensity light |
None | None | 1 allowed, ≤1 mm | ||
| 六方空洞(强光灯观测) Hex Plates by high intensity light |
Cumulative area≤1 % | Cumulative area≤1 % | Cumulative area≤3 % | ||
| 多型(强光灯观测) Polytype Areas by high intensity light |
None | Cumulative area≤2 % | Cumulative area≤5% | ||
| 划痕(强光灯观测) Scratches by high intensity light |
3 scratches to 1× wafer diameter cumulative length |
5 scratches to 1× wafer diameter cumulative length |
8 scratches to 1× wafer diameter cumulative length |
||
| 崩边 Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||
| 表面污染物(强光灯观测) Contamination by high intensity light |
None | ||||
三、碳化硅产品图册
